Microelectronic piezoelectric structure and method of forming the same

US6482538B2 · kind B2 · utility

Assignee

• Motorola, Inc. · US

Inventors

• Ramamoorthy Ramesh · Moraga, US
• Yu-Po Wang · Zhuolan Township, TW
• Jeffrey M. Finder · Chandler, US
• Zhiyi Yu · Allen, US
• Ravindranath Droopad · Chandler, US
• Kurt Eisenbeiser · Tempe, US

Key dates

• Filing date: Jul 25, 2001
• Grant date: Nov 19, 2002
• Expiry date: Jul 25, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/24917
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A high quality epitaxial layer of monocrystalline Pb(Mg,Nb)O3—PbTiO3 or Pb(Mg1−xNbx)O3—PbTiO3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.