Hydrogen implant for buffer zone of punch-through non epi IGBT
US6482681B1 · kind B1 · utility
79Cited by
14References
25Claims
0Family size
Assignee
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Key dates
| Filing date | May 5, 2000 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | May 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An IGBT is formed in a thin (less than 250 microns thick) float zone silicon wafer using a hydrogen implant to form an N+ buffer layer at the bottom of the wafer. A weak anode is formed on the bottom of the wafer. A single hydrogen implant, or a plurality of hydrogen implants of progressively shallower depth and increasing dose can be used to form the implant in a diffused float zone wafer. The process may also be used to form an N+ contact region in silicon to permit a good ohmic contact to the silicon for any type device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.