Uniform recess depth of recessed resist layers in trench structure
US6482716B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 11, 2000 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Jan 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming uniform-depth recesses across areas of different trench density, in accordance with the present invention, includes providing a substrate having trenches formed therein. The substrate includes regions of different trench density. The trenches are filled with a first filler material, and the first filler material is removed from a surface of the substrate. A second filler material is formed over the surface of the substrate such that the depth of the second filler material is substantially uniform across the regions of different trench density. Recesses are formed in the trenches such that the recess depth below the surface of the substrate is substantially uniform across the regions
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.