Method of fabricating semiconductor devices with contact studs formed without major polishing defects

US6486049B2 · kind B2 · utility

Assignees

• Motorola, Inc. · US
• Semiconductor 300 GmbH & Co. KG · DE
• Infineon Technologies AG · DE

Inventors

• John Maltabes · Austin, US
• Hans Zeindl · Altdorf, DE

Key dates

• Filing date: Apr 30, 2001
• Grant date: Nov 26, 2002
• Expiry date: Apr 30, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a semiconductor device, a contact stud (100) contacts a semiconductor substrate (10); the stud is embedded in an insulating structure with a first insulating layer (20) and a second insulating layer (20′). During manufacturing, (a) the first layer (20) is provided above the substrate (10); (b) a hole in the first layer (20) exposes a portion of the upper surface of the substrate to receive the stud; (c) a contact material (30, 40) is provided at the top of the resulting structure; (d) a first chemical-mechanical polishing (CMP) removes the contact material from the surface of the first layer (20) outside the hole; (e) residuals (50) of the contact material are cleaned away from the upper surface; (f) the second insulating layer (20′) is provided at the surface of the resulting structure; (g) and further polishing is applied.