Nitride based transistors on semi-insulating silicon carbide substrates
US6486502B1 · kind B1 · utility
121Cited by
9References
18Claims
0Family size
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Key dates
| Filing date | Feb 16, 2001 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Feb 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A high electron mobility transistor (HEMT) (10) is disclosed that includes a semi-insulating silicon carbide substrate (11), an aluminum nitride buffer layer (12) on the substrate, an insulating gallium nitride layer (13) on the buffer layer, an active structure of aluminum gallium nitride (14) on the gallium nitride layer, a passivation layer (23) on the aluminum gallium nitride active structure, and respective source, drain and gate contacts (21, 22, 23) to the aluminum gallium nitride active structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.