Hybrid dielectric structure for improving the stiffness of back end of the line structures

US6486557B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Charles R. Davis · Endicott, US
• Daniel C. Edelstein · White Plains, US
• John C. Hay, Jr. · Knoxville, US
• Jeffrey Hedrick · Peekskill, US
• Christopher V. Jahnes · Upper Saddle River, US
• Vincent J. McGahay · Poughkeepsie, US
• Henry A. Nye, III · Brookfield, US

Key dates

• Filing date: Feb 29, 2000
• Grant date: Nov 26, 2002
• Expiry date: Feb 29, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias.