Determination of dielectric constants of thin dielectric materials in a MOS (metal oxide semiconductor) stack
US6486682B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2001 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Jul 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
First and second dielectric constants, e1 and e2 respectively, for first and second dielectric materials forming a MOS (metal oxide semiconductor) stack are determined. First and second test MOS stacks having first and second total effective oxide thickness, EOTA and EOTB, respectively, are formed. The first and second test MOS stacks include first and second interfacial structures comprised of the second dielectric material with first and second thickness, T2A and T1A, respectively. In addition, the first and second test MOS stacks include first and second high-K structures comprised of the first dielectric material with first and second thickness, T2B and T1B, respectively. The thickness parameters EOTA, T1A, T2A, EOTB, T1B, and T2B of the test MOS stacks are measured. The dielectric constants, e1 and e2, are then determined depending on relations between values of EOTA, T1A, and T2A, and between values of EOTB, T1B, and T2B.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.