Film deposition method and apparatus
US6488984B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2001 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Apr 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6715
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a film deposition method, which performs one series of processing from formation of the barrier metal up to and including formation of the metal layer in an environment cut off from air. Specifically, the performing of the barrier metal layer formation in a first device and the metal layer formation in a second device; and the transport of a semiconductor wafer from the first device to the second device is performed through a transport pathway that is cut off from air. As a result, the barrier metal layer that is formed is not affected by, for example, natural oxidation and layer quality is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.