Method of forming a spin-on-glass insulation layer
US6489252B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2001 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Oct 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a SOG insulation layer of a semiconductor device comprises the steps of forming the SOG insulation layer on a substrate having a stepped pattern using a solution containing a polysilazane in an amount of less than 20% by weight in terms concentration of solid content, performing a pre-bake process for removing solvent ingredients in the insulation layer at a temperature of 50 to 350° C., and annealing at a temperature of 600 to 1200° C. The method of the invention further includes performing a hard bake process at a temperature of about 400° C. between the pre-bake process and the annealing step. Also, the polysilazane is desirably contained in an amount of 10 to 15% by weight.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.