Low temperature/low dopant oxide glass film
US6489255B1 · kind B1 · utility
1Cited by
21References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1996 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Dec 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02129
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer of doped oxide glass is deposited on a semiconductor device in a chemical vapor deposition chamber by reacting gaseous sources of silicon, ozone and at least one boron or phosphorus dopant in a carrier gas, the ozone being present in a ratio of about 9-15 weight percent of the carrier gas. The deposited layer of doped oxide glass contains no greater than about 4 weight percent each of boron and phosphorus concentration and is annealed at a temperature no greater than about 700° C. for a time sufficient to soften and outgas any residual moisture in the oxide glass layer and level the upper surface to a desired degree.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.