Photodiode having a plurality of PN junctions and image sensor having the same
US6489643B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1999 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Jun 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
The present invention relates to a pinned photodiode for an image sensor and a method for manufacturing the same; and, more particularly, to a pinned photodiode of an image sensor fabricated by CMOS processes and a manufacturing method thereof. The pinned photodiode, according to an embodiment of the present invention, comprises: a semiconductor layer of a first conductivity type; and at least two first doping regions of a second conductivity type alternately formed in the semiconductor layer and connected to each other at edges thereof so that the first doping regions have the same potential, wherein a plurality of PN junctions is formed in the semiconductor layer and the PN junctions improve a capturing capacity of photoelectric charges generated in the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.