Support for supporting a substrate in a process chamber
US6490144B1 · kind B1 · utility
31Cited by
23References
65Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1999 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Nov 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chamber 30 for processing a substrate 25 comprises a support 55 comprising a dielectric 60 enveloping an electrode 70. The electrode 70 may be chargeable to electrostatically hold the substrate 25 or may be chargeable to form an energized gas in the chamber 30 to process the substrate 25. A base 130 is below the support 55, and a compliant member 300 is positioned between the support 55 and the base 130. The compliant member 300 may be adapted to alleviate thermal stresses arising from a thermal expansion mismatch between the dielectric 60 and the base 130.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.