Patent · US Expired

Memory cell configuration, magnetic ram, and associative memory

US6490190B1 · kind B1 · utility

24Cited by

5References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ties Ramcke · Hersbruck, DE
Wolfgang Rosner · Hersbruck, DE
Lothar Risch · Neubiberg, DE

Key dates

Filing date	Mar 17, 2000
Grant date	Dec 3, 2002
Priority date	—
Expiry date	Mar 17, 2020

Classification

Technology area (CPC G)Physics
CPC primaryG11C15/046
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory cell configuration has word lines and bit lines that extend transversely with respect thereto. Memory elements with a giant magnetoresistive effect are respectively connected between one of the word lines and one of the bit lines. The bit lines are each connected to a sense amplifier by means of which the potential on the respective bit line can be regulated to a reference potential and at which an output signal can be picked off. The memory cell configuration can be used both as an MRAM and as an associative memory.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.