Programming and erasing methods for a reference cell of an NROM array
US6490204B2 · kind B2 · utility
113Cited by
95References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2001 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Apr 5, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a reference cell of a memory array includes the steps of programming the reference cell with large programming steps until a threshold voltage level of the reference cell is above an interim target level and programming said reference cell with small programming steps until the threshold voltage level is above a final target level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.