Method of making a Schottky diode in an integrated circuit
US6492192B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1998 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | Sep 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03L7/148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming an integrated circuit including a Schottky diode includes providing a substrate of a first conductivity type, defining a region of a second conductivity type relative to the substrate and forming an insulator over the second conductivity type region. The method also includes removing an area of the insulator for definition of a contact hole, and removing an area encircling the contact hole and forming highly doped regions of the second conductivity type in second conductivity type regions encircling the contact hole. The method further includes depositing a Schottky metal in the contact hole and annealing the metal to form a suicide interface to the second conductivity type region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.