Integrated capacitors fabricated with conductive metal oxides

US6492241B1 · kind B1 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Howard E. Rhodes · Boise, US
• Mark Visokay · Dallas, US
• Tom Graettinger · Boise, US
• Dan Gealy · Kuna, US
• Gurtej S. Sandhu · Boise, US
• Cem Basceri · Boise, US
• Steve Cummings · Boise, US

Key dates

• Filing date: Apr 10, 2000
• Grant date: Dec 10, 2002
• Expiry date: Apr 10, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.