Method of fabricating conductor structures with metal comb bridging avoidance
US6492281B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2000 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | Sep 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various methods of inspecting a workpiece for residue are provided. In one aspect, a method of fabricating a conductor layer on a substrate is provided that includes forming an aluminum-copper film on the substrate in a first processing chamber and forming an anti-reflective coating on the aluminum-copper film in a second processing chamber. The substrate is moved from the second processing chamber into a cooling chamber to quench the substrate. A first time interval during which the substrate is in the first processing chamber and second time interval during which the substrate is present in the second processing chamber are measured. The substrate is annealed to restore a uniform equilibrium distribution of copper in the aluminum if the first time interval exceeds about 600 seconds or the second time interval exceeds about 300 seconds. The method substantially reduces the risk of metal comb bridging device failures following etch definition of conductor lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.