Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
US6494998B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 30, 2000 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Aug 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A processing system 12 for processing a substrate with an ionized plasma comprises a processing chamber 13 defining a processing space 14 and including a substrate support 17, a gas inlet 20, and a plasma source for creating an ionized plasma in the processing space. The plasma source comprises an inductive element 24 operable for coupling electrical energy into the processing space. The inductive element 24 winds around portions of the processing space 14 inside the processing chamber 13 and is encased inside a dielectric material 30 to physically separate the element from the processing space while allowing the element to couple electrical energy into the processing space. Alternatively, the inductive element is coupled to a DC power supply 98 for enhancing its magnetization to reduce the capacitive coupling of energy between the inductive element and the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.