Method for manufacturing semiconductor substrate having an epitaxial film in the trench
US6495294B1 · kind B1 · utility
46Cited by
7References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2000 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Oct 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench is formed in a silicon substrate, and an epitaxial film is formed on the substrate and in the trench. After a part of the epitaxial film formed around an opening portion of the trench is etched, another epitaxial film is formed on the substrate and in the trench. Accordingly, the trench can be filled with the epitaxial films completely. Then, the surface of the substrate is flattened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.