Multi-level fuse structure
US6495901B2 · kind B2 · utility
5Cited by
10References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 30, 2001 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Jan 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a first conductor and a second conductor for fuse terminals. A fuse portion is disposed on a different level relative to both the first conductor and the second conductor. A first contact connects the fuse portion to the first conductor, and a second contact connects the fuse portion to the second conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.