Apparatus and method of forming preferred orientation-controlled platinum film using oxygen
US6498097B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1998 |
| Grant date | Dec 24, 2002 |
| Priority date | — |
| Expiry date | Apr 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A platinum film orientation-controlled to (111), (200) and/or (220) is provided by depositing the platinum film under an atmosphere containing an oxygen component such as O2, O3, N2O , N2+O2, or mixtures thereof as well as an inert gas (Ar, Ne, Kr, or Xe) on a substrate heated to a temperature ranged from room temperature to 700° C., and annealing to remove the gases introduced into the platinum film during the deposition thereof. The platinum film formed in this process has excellent electrical conductivity (resistivity is lower than 15 &mgr;&OHgr;-cm), good enough adhesion strength to be used for electronic devices, and does not show hillocks, voids or pinholes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.