Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) films
US6498112B1 · kind B1 · utility
14Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2001 |
| Grant date | Dec 24, 2002 |
| Priority date | — |
| Expiry date | Jul 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided, the method comprising forming a first dielectric layer above a structure layer, the first dielectric layer having an upper portion. The method also comprises grading the upper portion of the first dielectric layer using at least one of monomethyl silane, dimethyl silane, trimethyl silane, and tetramethyl silane with helium (He) and at least one of nitrous oxide (N2O) and molecular nitrogen (O2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.