Patent · US Expired

Semiconductor configuration

US6498382B2 · kind B2 · utility

18Cited by

8References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Franz Hirler · Isen, DE
Wolfgang Werner · Hersbruck, DE

Key dates

Filing date	Mar 26, 2001
Grant date	Dec 24, 2002
Priority date	—
Expiry date	Mar 26, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/691
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a semiconductor configuration in which electrodes are insulated by a gas-filled or evacuated cavity. The semiconductor configuration includes at least two rigid electrodes; body regions; an active zone; a drift path; and an insulating device electrically isolating the at least two electrodes from each another. At least one of the at least two electrodes is a trench electrode electrically connected to the active zone. The insulating device includes a structure selected from the group consisting of at least one insulating or holding layer and a pn junction. The insulating device is further formed with at least one cavity. The trench electrode is isolated from the drift path by the cavity and surrounded by the cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.