Selectively etching silicon using fluorine without plasma
US6500356B2 · kind B2 · utility
34Cited by
19References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2000 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Mar 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for selectively etching silicon from a workpiece without etching silicon oxide or silicon nitride. The principal etchant gas is molecular fluorine gas (F2) that is not excited to a plasma state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.