Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6500605B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2000 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Oct 25, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing photoresist and residue from a substrate begins by maintaining supercritical carbon dioxide, an amine, and a solvent in contact with the substrate so that the amine and the solvent at least partially dissolve the photoresist and the residue. Preferably, the amine is a tertiary amine. Preferably, the solvent is selected from the group consisting of DMSO, EC, NMP, acetyl acetone, BLO, acetic acid, DMAC, PC, and a mixture thereof. Next, the photoresist and the residue are removed from the vicinity of the substrate. Preferably, the method continues with a rinsing step in which the substrate is rinsed in the supercritical carbon dioxide and a rinse agent. Preferably, the rinse agent is selected from the group consisting of water, alcohol, a mixture thereof, and acetone. In an alternative embodiment, the amine and the solvent are replaced with an aqueous fluoride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.