Method of high-density plasma boron-containing silicate glass film deposition
US6500771B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2000 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Jan 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a boron-contained silicate glass layers, such as borosilicate and borophosphosilicate glass films at low temperature using High Density Plasma CVD with silane derivatives as a source of silicon, boron and phosphorus compounds as a doping compounds, oxygen is described. RF plasma with certain plasma density is maintained throughout the entire deposition step in reactor chamber. Key feature of the invention's process is a flow capability of boron-contained silicate glass materials which provide a film with good film integrity and void-free gap-fill within the steps of device structures after low temperature thermal budget anneal conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.