Transistors having independently adjustable parameters
US6501131B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 22, 1999 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Jul 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The process rules for manufacturing semiconductor devices such as MOSFET's are modified to provide dual work-function doping following the customary gate sidewall oxidation step, greatly reducing thermal budget and boron penetration concerns. The concern of thermal budget is further significantly reduced by a device structure which allows a reduced gap aspect ratio while maintaining low sheet resistance values. A reduced gap aspect ratio also relaxes the need for highly reflowable dielectric materials and also facilitates the use of angled source-drain (S-D) and halo implants. Also provided is a novel structure and process for producing a MOSFET channel, lateral doping profile which suppresses short channel effects while providing low S-D junction capacitance and leakage, as well as immunity to hot-carrier effects. This also affords the potential for reduction in the contact stud-to-gate conductor capacitance, because borderless contacts can be formed with an oxide gate sidewall spacer. As a result, the S-D junctions can be doped independently of the gate conductor doping, more easily allowing a variety of MOSFET structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.