Phase shift mask blank, phase shift mask, and method of manufacture
US6503668B2 · kind B2 · utility
2Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Mar 13, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.