Method of making MFMOS capacitors with high dielectric constant materials

US6503763B2 · kind B2 · utility

Assignee

• Sharp Laboratories of America, Inc. · US

Inventors

• Tingkai Li · Vancouver, US
• Sheng Teng Hsu · Camas, US
• Hong Ying · Cupertino, US
• Bruce D. Ulrich · Beaverton, US
• Yanjun Ma · Bellevue, US

Key dates

• Filing date: Mar 27, 2001
• Grant date: Jan 7, 2003
• Expiry date: Mar 27, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/689

Abstract

A MFMOS one transistor memory structure for ferroelectric non-volatile memory devices includes a high dielectric constant material such as ZrO2, HfO2, Y2O3, or La2O3, or the like, or mixtures thereof, to reduce the operation voltage and to increase the memory window and reliability of the device.