Fabrication process for a semiconductor device with an isolated zone
US6503812B2 · kind B2 · utility
1Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2002 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Jan 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device comprises a semiconductor substrate (SB) having locally at least one zone (ZL) terminating in the surface of the substrate and entirely bordered, along its lateral edges and its bottom, by an insulating material so as to be completely isolated from the rest of the substrate. The horizontal isolating layer may be a layer of constant thickness or a crenellated layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.