Application of controlling gas valves to reduce particles from CVD process
US6503832B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Feb 13, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention proposes an application of controlling gas valves to reduce particles from the CVD process. First, the actions of opening and closing a gas valve are added to let particles possibly adhering on the gas valve fall during the idle period between the CVD processes of a wafer and the next wafer. Next, an inert gas is led in to purge the gas valve and the reaction chamber. Finally, a gas-extracting means is used to extract the gas out. The actions of opening and closing the gas valve only take a few seconds so that the time of the next wafer entering the reaction chamber to perform the CVD process will not be influenced. The present invention has the advantage of increasing the yield of wafer while the production is not influenced and the original fabrication equipments need not be changed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.