Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off
US6503851B2 · kind B2 · utility
5Cited by
10References
56Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 3, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Aug 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for enhanced selective deposition of a silicon oxide onto a substrate by pulsing delivery of the reactants through a linear injector is disclosed. The silicon oxide layer is formed by the ozone decomposition of TEOS at relatively low temperatures and relatively high pressures. The ozone delivery is pulsed on and off. Optionally, the delivery of the ozone and the delivery of the TEOS are pulsed on and off alternately.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.