Magneto-resistive device including soft reference layer having embedded conductors
US6504221B1 · kind B1 · utility
26Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Sep 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a data ferromagnetic layer having a magnetization that can be oriented in either of two directions, a reference layer, and a spacer layer between the data and reference layers. The reference layer includes a dielectric layer, first and second conductors separated by the dielectric layer, and a ferromagnetic cladding on the first and second conductors. The memory device may be read by temporarily setting the magnetization of the reference layer to a known orientation, and determining a resistance state of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.