Digit line architecture for dynamic memory
US6504255B2 · kind B2 · utility
24Cited by
38References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 5, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Apr 5, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4097
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A novel bi-level DRAM architecture is described which achieves significant reductions in die size while maintaining the noise performance of traditional folded architectures. Die size reduction results primarily by building the memory arrays with 6F2 or smaller memory cells in a type of cross point memory cell layout. The memory arrays utilize stacked digitlines and vertical digitline twisting to achieve folded architecture operation and noise performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.