Integrated memory with plate line segments
US6504747B2 · kind B2 · utility
3Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2001 |
| Grant date | Jan 7, 2003 |
| Priority date | — |
| Expiry date | Jun 10, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The integrated memory has driver units DRVi, via which the column select lines CSLi are connected to the plate line segments PLi and which, as a function of the potential of the associated column select lines CSLi and the word addresses RADR on the plate line segments PLi connected to them, generate potentials which have defined values for each operating state of the memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.