High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
US6507046B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 11, 2001 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | May 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high-resistivity silicon carbide single crystal is disclosed that includes at least one compensated dopant having an electronic energy level far enough from an edge of the silicon carbide bandgap to avoid conductive behavior, while far enough from mid-gap towards the band edge to create a greater band offset than do mid-level states when the substrate is in contact with a doped silicon carbide epitaxial layer and when the net amount of the dopant present in the crystal is sufficient to pin the Fermi level at the dopant's electronic energy level. The silicon carbide crystal has a resistivity of at least 5000 ohms-centimeters at room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.