Stephan Mueller
28Patents
11h-index
30Co-inventors
71Inventor score
Filing activity: May 11, 2001 → Mar 4, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6814801B2 | Method for producing semi-insulating resistivity in high purity silicon carbide crystals | Chemistry; Metallurgy | 35 | Expired |
| US6507046B2 | High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage | Electricity | 30 | Expired |
| US6706114B2 | Methods of fabricating silicon carbide crystals | Emerging Cross-Sectional Technologies | 28 | Expired |
| US7316747B2 | Seeded single crystal silicon carbide growth and resulting crystals | Electricity | 25 | Expired |
| US8384090B2 | Low 1C screw dislocation 3 inch silicon carbide wafer | Emerging Cross-Sectional Technologies | 22 | Active |
| US7192482B2 | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals | Emerging Cross-Sectional Technologies | 19 | Expired |
| US7601441B2 | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7351286B2 | One hundred millimeter single crystal silicon carbide wafer | Emerging Cross-Sectional Technologies | 15 | Expired |
| US8147991B2 | One hundred millimeter single crystal silicon carbide wafer | Emerging Cross-Sectional Technologies | 14 | Active |
| US6849874B2 | Minimizing degradation of SiC bipolar semiconductor devices | Electricity | 13 | Expired |
| US7300519B2 | Reduction of subsurface damage in the production of bulk SiC crystals | Chemistry; Metallurgy | 11 | Expired |
| US8785946B2 | Low 1C screw dislocation 3 inch silicon carbide wafer | Emerging Cross-Sectional Technologies | 10 | Active |
| US8589737B2 | Memory system with redundant data storage and error correction | Physics | 8 | Active |
| US8650440B2 | Processor based system having ECC based check and access validation information means | Physics | 7 | Active |
| US9059118B2 | Method for producing semi-insulating resistivity in high purity silicon carbide crystals | Chemistry; Metallurgy | 6 | Active |
| US9279192B2 | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology | Electricity | 5 | Active |
| US7427326B2 | Minimizing degradation of SiC bipolar semiconductor devices | Electricity | 4 | Active |
| US9152511B2 | System for dynamically distributing an available memory resource to redundant and non-redundant storage areas using RAM routing logic | Physics | 4 | Active |
| US9342258B2 | Integrated circuit device and method for providing data access control | Physics | 4 | Active |
| US10002760B2 | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology | Electricity | 3 | Active |
| US7364617B2 | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals | Emerging Cross-Sectional Technologies | 3 | Active |
| US9781120B2 | System on chip and method therefor | Electricity | 2 | Active |
| US8163086B2 | Halogen assisted physical vapor transport method for silicon carbide growth | Emerging Cross-Sectional Technologies | 1 | Active |
| US10761925B2 | Multi-channel network-on-a-chip | Physics | 1 | Active |
| US7501022B2 | Methods of fabricating silicon carbide crystals | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.