Gas distribution apparatus for semiconductor processing
US6508913B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2001 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Oct 25, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.