Multilayer photoresist process in photolithography
US6509137B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2000 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | May 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A multilayer photoresist process in photolithography, which is applicable on a substrate having a composite photoresist layer with a desired thickness formed thereon. The present invention provides a process, comprising the following steps. A photoresist layer is formed on a substrate, and subsequently exposed through a photomask, followed by the developing process to pattern the photoresist. Then, the patterned photoresist layer is stabilized. This sequence is repeated untill at least another one layer is deposited and patterned on the substrate. Each photoresist layer has almost the same pattern with the underlying patterned photoresist layer. Many thin photoresist layers are accumulated to form a composite photoresist layer with a desired thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.