Method and apparatus for monitoring wafer stress
US6509201B1 · kind B1 · utility
18Cited by
8References
37Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 11, 2001 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Apr 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides for a method and an apparatus for characterizing wafer stress. At least one semiconductor device is processed. Metrology data from the processed semiconductor device is acquired. Micro-Raman data relating to the processed semiconductor device is acquired. A wafer-stress analysis based upon the metrology data and the micro-Raman data is performed. A feedback process based upon the wafer stress analysis is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.