Heterojunction bipolar transistor

US6509242B2 · kind B2 · utility

Assignee

• Agere Systems Inc. · US

Inventors

• Michel R. Frei · Berkeley Heights, US
• Clifford A. King · Kingston, US
• Yi Ma · Orlando, US
• Marco Mastrapasqua · Annandale, US
• Kwok Ng · Hackettstown, US

Key dates

• Filing date: Jan 12, 2001
• Grant date: Jan 21, 2003
• Expiry date: Jan 12, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/891

Abstract

A heterojunction bipolar transistor includes an emitter or collector region of doped silicon, a base region including silicon-germanium, and a spacer. The emitter or collector region form a heterojunction with the base region. The spacer is positioned to electrically insulate the emitter or collector region from an external region. The spacer includes a silicon dioxide layer physically interposed between the emitter or collector region and the remainder of the spacer.