Method of forming a semiconductor contact that includes selectively removing a Ti-containing layer from the surface
US6509278B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 2, 1999 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Sep 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for removing titanium-containing layers from a substrate surface where those titanium-containing layers are formed by chemical vapor deposition (CVD) techniques. Titanium-containing layers, such as titanium or titanium nitride, formed by CVD are removed from a substrate surface using a sulfuric acid (H2SO4) solution. The H2SO4 solution permits selective and uniform removal of the titanium-containing layers without detrimentally removing surrounding materials, such as silicon oxides and tungsten. Where the titanium-containing layers are applied to the sidewalls of a hole in the substrate surface and a plug material such as tungsten is used to fill the hole, subsequent spiking of the H2SO4 solution with hydrogen peroxide (H2O2) may be used to recess the titanium-containing layers and the plug material below the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.