Gary Chen
50Patents
12h-index
67Co-inventors
87Inventor score
Filing activity: Sep 1, 1998 → Aug 31, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6758263B2 | Heat dissipating component using high conducting inserts | Emerging Cross-Sectional Technologies | 69 | Expired |
| US7460367B2 | Method and system for dissipating thermal energy from conduction-cooled circuit card assemblies which employ remote heat sinks and heat pipe technology | Electricity | 38 | Active |
| US6391794B1 | Composition and method for cleaning residual debris from semiconductor surfaces | Electricity | 33 | Expired |
| US6162738A | Cleaning compositions for high dielectric structures and methods of using same | Electricity | 23 | Expired |
| US7108055B2 | Optimized heat sink using high thermal conducting base and low thermal conducting fins | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6573175B1 | Dry low k film application for interlevel dielectric and method of cleaning etched features | Electricity | 20 | Expired |
| US6358788B1 | Method of fabricating a wordline in a memory array of a semiconductor device | Electricity | 20 | Expired |
| US6627913B2 | Insulation of an MRAM device through a self-aligned spacer | Performing Operations; Transporting | 17 | Expired |
| US6890865B2 | Low k film application for interlevel dielectric and method of cleaning etched features | Electricity | 16 | Expired |
| US7437995B2 | Axially compact mechanical igniter for thermal batteries and the like | Electricity | 15 | Active |
| US8431457B2 | Method for fabricating a shielded gate trench MOS with improved source pickup layout | Electricity | 14 | Active |
| US6455906B2 | Gate stack structure with conductive silicide segment that has substantially etched nitride and/or oxynitride defects protruding from its sidewalls | Electricity | 13 | Expired |
| US10330617B2 | Wearable sensor badge for toxic industrial chemicals | Physics | 12 | Active |
| US6592777B2 | Manufacture and cleaning of a semiconductor | Electricity | 11 | Expired |
| US6174391A | Magnesium-fueled pyrotechnic compositions and processes based on elvax-cyclohexane coating technology | Chemistry; Metallurgy | 8 | Expired |
| US6509278B1 | Method of forming a semiconductor contact that includes selectively removing a Ti-containing layer from the surface | Electricity | 7 | Expired |
| US7578895B1 | Perchlorate free flash bang compositions for pyrotechnic training rounds | Chemistry; Metallurgy | 7 | Expired |
| US9669932B2 | Display mounting system for reduced HIC | Mechanical Engineering; Lighting; Heating | 6 | Active |
| US6686275B2 | Method of selectively removing metal nitride or metal oxynitride extrusions from a semmiconductor structure | Electricity | 6 | Expired |
| US6664611B2 | Composition and method for cleaning residual debris from semiconductor surfaces | Electricity | 6 | Expired |
| US7211200B2 | Manufacture and cleaning of a semiconductor | Electricity | 5 | Expired |
| US6703303B2 | Method of manufacturing a portion of a memory | Electricity | 5 | Expired |
| US8994101B2 | Shielded gate trench MOS with improved source pickup layout | Electricity | 5 | Active |
| US6224424A | Multi-line signal cable | Electricity | 5 | Expired |
| US6605863B2 | Low k film application for interlevel dielectric and method of cleaning etched features | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.