Grooved channel schottky MOSFET
US6509609B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2001 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Jun 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A grooved channel Schottky contacted MOSFET has asymmetric source and drain regions. The MOSFET includes an undoped silicon substrate with a background doping concentration of less than about 1017 cm−3. A grooved channel is formed in a first surface of the substrate. A first metal silicide material is formed in a first side of the grooved channel, forming a source region, and a second metal silicide material is formed on a second side of the grooved channel, forming a drain region. A metal gate is formed in the grooved channel. The grooved structure allows the off-state current to be reduced to less than 50 pA/&mgr;m. Further, the feature size can be scaled down to 10 nm without strong short-channel effects (DIBL<0.063) and the gate delay (CV/I) is reduced to 2.4 ps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.