Self-aligned floating body control for SOI device through leakage enhanced buried oxide

US6509613B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• William G. En · Sunnyvale, US
• Srinath Krishnan · Campbell, US
• Judy Xilin An · San Jose, US

Key dates

• Filing date: May 4, 2001
• Grant date: Jan 21, 2003
• Expiry date: May 4, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6708

Abstract

A semiconductor-on-insulator (SOI) device formed on an SOI structure with a buried oxide (BOX) layer disposed therein and an active region disposed on the BOX layer having active regions defined by isolation trenches and the BOX layer. The SOI device includes a gate formed over one of the active regions. The gate defines a channel interposed between a source and a drain formed within one of the active regions. The SOI device includes a leakage enhanced region within the BOX layer defined by the gate.