Phase shift mask blank, phase shift mask and method of manufacture
US6511778B2 · kind B2 · utility
7Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2001 |
| Grant date | Jan 28, 2003 |
| Priority date | — |
| Expiry date | Mar 2, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A phase shift mask blank comprising a transparent substrate and at least one layer of a phase shifter thereon, wherein the phase shifter is a film composed primarily of a fluorine-doped metal silicide, can be fabricated into a high-performance phase shift mask having adequate transmittance and good stability over time even when used with light sources that emit short-wavelength light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.