Patent · US Expired

Method for controlling deposition parameters based on polysilicon grain size feedback

US6511898B1 · kind B1 · utility

11Cited by

9References

10Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Thomas J. Sonderman · Austin, US
Jeremy Lansford · Austin, US
Anthony J. Toprac · Austin, US

Key dates

Filing date	May 24, 2000
Grant date	Jan 28, 2003
Priority date	—
Expiry date	May 24, 2020

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A processing line includes a deposition tool, a metrology tool and a controller. The deposition tool is adapted to form a polysilicon layer on a wafer in accordance with a recipe. The metrology tool is adapted to measure a grain size of the polysilicon layer. The controller is adapted to modify the recipe for subsequently formed polysilicon layers based on the measured grain size. A method for controlling a deposition process includes forming a polysilicon layer on a wafer in accordance with a recipe; measuring a grain size of the polysilicon layer; and changing the recipe for subsequently formed polysilicon layers based on the measured grain size.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.