SOI device with structure for enhancing carrier recombination and method of fabricating same

US6512244B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Dong-Hyuk Ju · Cupertino, US
• William G. En · Sunnyvale, US
• Srinath Krishnan · Campbell, US
• Xilin Judy An · San Jose, US

Key dates

• Filing date: May 7, 2001
• Grant date: Jan 28, 2003
• Expiry date: May 7, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6715

Abstract

A semiconductor-on-insulator (SOI) device. The SOI device includes an SOI wafer including an active layer, a substrate and a buried insulation layer disposed therebetween. The active layer includes an abrupt region disposed along a lower portion of the active layer, the abrupt region having the same P or N doping type as a doping type of a body region.