Semiconductor device
US6512271B1 · kind B1 · utility
143Cited by
5References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1999 |
| Grant date | Jan 28, 2003 |
| Priority date | — |
| Expiry date | Nov 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
Abstract
A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate electrode through a gate insulating film, and portions that do not overlap. As a result, the TFT can be prevented from degradation in an ON state, and it is possible to reduce the leak current in an OFF state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.