Integrated CMOS structure for gate-controlled buried photodiode

US6512280B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Zhiliang Chen · Shanghai, CN
• Kuok Ling · Austin, US
• Hisashi Shichijo · Plano, US
• Katsuo Komatsuzaki · Ibaraki, JP
• Chin-Yu Tsai · Plano, US

Key dates

• Filing date: May 16, 2001
• Grant date: Jan 28, 2003
• Expiry date: May 16, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

A light-sensing diode fabricated in a semiconductor substrate having a surface protected by an insulator, comprising a first region of one conductivity type in this substrate, a second region of the opposite conductivity type forming a junction with the first region in the substrate; this junction having a convoluted shape, providing two portions generally parallel to the surface, and a constricted intersection with the surface; and a gate for applying electrical bias across the junction, this gate positioned on the insulator such that it covers all portions of the junction intersection with the surface, thereby creating a gate-controlled photodiode.